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SCIESCOPUS

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Min, KS[Min, K. S.]; Park, C[Park, C.]; Kang, CY[Kang, C. Y.]; Park, CS[Park, C. S.]; Park, BJ[Park, B. J.]; Kim, YW[Kim, Y. W.]; Lee, BH[Lee, B. H.]; Lee, JC[Lee, Jack C.]; Bersuker, G[Bersuker, G.]; Kirsch, P[Kirsch, P.], et al.

ArticleIssue Date2013CitationSOLID-STATE ELECTRONICS, v.86, pp.75 - 78PublisherPERGAMON-ELSEVIER SCIENCE LTD

SCIESCOPUS

Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target

Ahn, KJ[Ahn, Kyung-Jun]; Park, JH[Park, Ji-Hyeon]; Shin, BK[Shin, Beom-Ki]; Lee, W[Lee, Woong]; Yeom, GY[Yeom, Geun Young]; Myoung, JM[Myoung, Jae-Min]

ArticleIssue Date2013CitationAPPLIED SURFACE SCIENCE, v.271, pp.216 - 222PublisherELSEVIER SCIENCE BV

SCIESCOPUS

Study on contact distortion during high aspect ratio contact SiO2 etching

Kim, JK[Kim, Jong Kyu]; Lee, SH[Lee, Sung Ho]; Cho, SI[Cho, Sung Il]; Yeom, GY[Yeom, Geun Young]

ArticleIssue Date2015CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.33, no.2PublisherA V S AMER INST PHYSICS

SCOPUS

Improved adhesion between copper and prepreg using plasma press process

Kim D.-S.[Kim D.-S.]; Mun M.-K.[Mun M.-K.]; Yeom G.-Y.[Yeom G.-Y.]

ArticleIssue Date2016CitationInternational Conference on Control, Automation and Systems, v.0, pp.341 - 343PublisherIEEE Computer Society

A special issue on nanotechnology in Korea 2014-part 1

Yeom, G.-Y.[Yeom, G.-Y.]; Rhee, J.Y.[Rhee, J.Y.]; Pyo, S.G.[Pyo, S.G.]; Choe, H.[Choe, H.]

ArticleIssue Date2015CitationJournal of Nanoscience and Nanotechnology, v.15, no.10, pp.7427 - 7429

SCIESCOPUS

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices

Min, KS[Min, K. S.]; Kang, SH[Kang, S. H.]; Kim, JK[Kim, J. K.]; Jhon, YI[Jhon, Y. I.]; Jhon, MS[Jhon, M. S.]; Yeom, GY[Yeom, G. Y.]

ArticleIssue Date2013CitationMICROELECTRONIC ENGINEERING, v.110, pp.457 - 460PublisherELSEVIER SCIENCE BV

KCI

상압 플라즈마를 이용한 무기박막의 화학기상 증착법에 대한 연구동향

이승민[이승민]; 김경남[김경남]; 염근영[염근영]

ArticleIssue Date2015Citation한국표면공학회지, v.48, no.5, pp.245 - 252Publisher한국표면공학회

SCIESCOPUS

Surface Degradation Mechanism During the Fluorine-Based Plasma Etching of a Low-k Material for Nanoscale Semiconductors

Kim, JK[Kim, Jong Kyu]; Kang, SH[Kang, Seung Hyun]; Choi, SI[Cho, Sung Il]; Lee, SH[Lee, Sung Ho]; Kim, KN[Kim, Kyong Nam]; Yeom, GY[Yeom, G. Y.]

ArticleIssue Date2014CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.12, pp.9411 - 9417

SCIESCOPUSKCI

Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

Jeon, MH[Jeon, M. H.]; Mishra, AK[Mishra, A. K.]; Kang, SK[Kang, S. -K.]; Kim, KN[Kim, K. N.]; Kim, IJ[Kim, I. J.]; Lee, SB[Lee, S. B.]; Sin, TH[Sin, T. H.]; Yeom, GY[Yeom, G. Y.]

ArticleIssue Date2013CitationCURRENT APPLIED PHYSICS, v.13, no.8, pp.1830 - 1836PublisherELSEVIER SCIENCE BV

SCIESCOPUS

Investigation of the Properties of Ba-Substituted La0.7Sr0.3-x Ba (x) MnO3 Perovskite Manganite Films for Resistive Switching Applications

Choi, SG[Choi, Sun Gyu]; Lee, HS[Lee, Hong-Sub]; Yeom, GY[Yeom, Geun Young]; Park, HH[Park, Hyung-Ho]

ArticleIssue Date2013CitationJOURNAL OF ELECTRONIC MATERIALS, v.42, no.6, pp.1196 - 1201PublisherSPRINGER

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