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SCIESCOPUSKCI

Application of the Black Silicon Phenomenon to Forming High-Aspect-Ratio Deep Vias

Lim, YD[Lim, Yeong-Dae]; Lee, SH[Lee, Seung-Hwan]; Yo, WJ[Yoo, Won Jong]

ArticleIssue Date2009CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.2, pp.616 - 620PublisherKOREAN PHYSICAL SOC

SCIESCOPUS

Hot-electron capture for CHEI programming in SONOS-type flash memory using high-k trapping layer

Zhang, G[Zhang, Gang]; Yoo, WJ[Yoo, Won Jong]; Ling, CH[Ling, Chung-Ho]

ArticleIssue Date2008CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.6, pp.1502 - 1510PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUSKCI

Roles of F and O radicals and positive ions in a SF 6/0 2 plasma in forming deep via structures

Lim, Y.-D.[Lim, Y.-D.]; Lee, S.-H.[Lee, S.-H.]; Yoo, W.J.[Yoo, W.J.]; Jung, O.-J.[ Jung, O.-J.]; Kim, S.-C.[ Kim, S.-C.]; Lee, H.-C.[ Lee, H.-C.]

ArticleIssue Date2009CitationJournal of the Korean Physical Society, v.54, no.5 PART 1, pp.1774 - 1778

SCIESCOPUS

Electrical characteristics of memory devices with a high-k HfO2 trapping layer and dual SiO2/Si3N4 tunneling layer

Wang, YQ[Wang, Ying Qian]; Hwang, WS[Hwang, Wan Sik]; Zhang, G[Zhang, Gang]; Samudra, G[Samudra, Ganesh]; Yeo, YC[Yeo, Yee-Chia]; Yoo, WJ[Yoo, Won Jong]

ArticleIssue Date2007CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.10, pp.2699 - 2705PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Potential well engineering by partial oxidation of TiN for high-speed and low-voltage flash memory with good 125°C data retention and excellent endurance

Zhang, G.[Zhang, G.]; Ra, C.H.[Ra, C.H.]; Li, H.-M.[Li, H.-M.]; Yang, C.[Yang, C.]; Yoo, W.J.[Yoo, W.J.]

ArticleIssue Date2009CitationTechnical Digest - International Electron Devices Meeting, IEDM

Memory properties using nano-scale phase separation of HfO based dielectrics

Yingqian, W.[Yingqian, W.]; Gang, Z.[Gang, Z.]; Yoo, W[Yoo, W]

ArticleIssue Date2007CitationICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp.729 - 731

Novel HfAlO charge trapping layer in SONOS type flash memory for multi-bit per cell operation

Gang, Z.[Gang, Z.]; Yoo, W[Yoo, W]

ArticleIssue Date2007CitationICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp.781 - 783

Improvement of multiple-level cell endurance of NAND flash memories using HfO2/ZrO2 charge storage layer

Zhang, G.[Zhang, G.]; Yoo, W.J.[Yoo, W.J.]

ArticleIssue Date2007CitationECS Transactions, v.11, no.4, pp.519 - 528

SCIESCOPUS

Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF

Hwang, WS[Hwang, Wan Sik]; Cho, BJ[Cho, Byung-Jin]; Chan, DSH[Chan, Daniel S. H.]; Yoo, WJ[Yoo, Won Jong]

ArticleIssue Date2007CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061PublisherA V S AMER INST PHYSICS

SCIESCOPUS

Effects of SiO(2)/Si(3)N(4) hard masks on etching properties of metal gates

Hwang, WS[Hwang, Wan Sik]; Cho, BJ[Cho, Byung-Jin]; Chan, DSH[Chan, Daniel S. H.]; Bliznetsov, V[Bliznetsov, Vladimir]; Yoo, WJ[Yoo, Won Jong]

ArticleIssue Date2006CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694PublisherA V S AMER INST PHYSICS

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