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초록

We report a two-stage gallium nitride on silicon carbide (GaN-on-SiC) monolithic microwave integrated circuit (MMIC) power amplifier that delivers 40.1-41.8 dBm saturated output power and 20-35% power-added efficiency (PAE) over the frequency range of 6-18 GHz. A compact circuit size of 3.9× 2.5 mm2 and broadband operation were achieved by cascading high-pass and low-pass (HP/LP) structures and compensating for the large output capacitance of the high-electron-mobility transistors (HEMTs) using WIN Semiconductor's 0.12 μm process. A low impedance transformation ratio of the driver enables broadband inter-stage matching. To our knowledge, the implemented MMIC exhibits very high efficiency even within each of the individual C-, X-, and Ku-Bands, and shows very low variation in saturated output power with the smallest reported size.

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