ScholarWorks@성균관대학교

초록

Graded silicon-nitride (SiNx) single-layer (SLAR) and double-layer antireflection coatings (DLAR) are simulated, fabricated, and their reliability assessed for high-efficiency n-TOPCon solar cells. Using OPAL 2, the optimal SiNx SLAR (75 nm, R.I = 2.05) and SiNx DLAR (55 nm top layer, R.I = 1.90 and 30 nm bottom layer, R.I = 2.1) configurations were identified and experimentally validated. These parameters were then used in SunSolve simulations, where DLAR achieved a higher power conversion efficiency of 24.21% than SLAR 23.73%, due to enhanced optical impedance matching and improved current density (Jsc) as 40.88 mA/cm2 for DLAR as compared to 40.51 mA/cm2 for SLAR. Experimentally, DLAR showed superior transmittance ~95.96%, a wider optical bandgap of 3.75 eV, and an effective carrier lifetime (MCLT) of 729 μs compared to 610 μs for SLAR. FTIR analysis revealed enhanced SiN–H bonding (~5.01 × 1022 cm−3) and reduced Si–H content in DLAR, indicating more stable hydrogen incorporation and improved passivation. Under damp heat stress (85°C/85% RH) SiNx DLAR exhibited lower degradation of 2.46% and recovery of 1.13% in N2 ambient environment at 250°C than SiNx SLAR 4.28% degradation and 1.72% recovery. Interface trap density (Dit) and fixed charge (Qf) measurements further support the superior chemical and field-effect passivation of DLAR.

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