ScholarWorks@성균관대학교

초록

As the physical limits of device scaling have now been reached, the paradigm shift has been derived toward three-dimensional (3D) vertical integration. 3D heterogeneous integration (HI) has been emerged as a significant solution to enhance integration density, reduce power consumption, and simplify fabrication processes. Recently, Cu-SiCN bonding is obtaining the tremendous attention for 3D HI realization, overcoming the conventional Cu-SiO2 bonding within enhanced bonding strength and improved void resistance. Nevertheless, plasma activation of SiCN bonding inevitably induce the interfacial stability and long-term device reliability, resulting the SiCN plasma activation as a limiting step in SiCN-SiCN bonding process. Herein, a single-step SiCN-SiCN direct bonding has been presented during the chemical mechanical planarization, enabling the fabrication process reduction within back-end-of-line process compatibility. The SiCN dangling bond activation was experimentally validated through the time-of-flight static secondary-ion mass spectrometry, contact angle measurements, and electron spin resonance, Fourier-transform infrared spectroscopy, and X-ray photoelectron spectroscopy measurements. The SiCN functionalization effects was mechanically validated within scanning probe lithography, inducing the site-selective organic etching and the direct correspondence of the SiCN removal rate. In conclusion, we envision that our single-step SiCN-SiCN bonding provides versatile advances in 3D heterogeneous integration technologies, utilizing the next-generation 3D vertical chip platform.

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