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초록

In this paper, we proposed a thin diagonally dispersed ground Through Silicone Via (TSV) array channel for next-generation High-Bandwidth Memory (HBM). A fine pitch TSV enabled by the hybrid bonding technology brought intensified crosstalk and thermo-mechanical stress. In contrast to placing a typical ground TSV, placing small ground TSVs in a diagonally dispersed pattern reduces both crosstalk and the mechanical stress between fine-pitch packed TSVs. The far-end and near-end crosstalk power sums between the aggressor and the victim are reduced to below -48.60 dB and -43.90 dB by a small ground TSV array that is scattered diagonally. Substituting the smaller diagonally dispersed ground TSV pattern for the conventional ground TSV mitigates vertical eye collapse at 24Gbps, enabling a vertical eye opening of 0.7V at that data rate. Eye width increases 48.73% and 64.50% at data rate 24 Gb/s and 32 Gb/s, respectively. In addition to the signal integrity improvements, Thermo-mechanical reliability was evaluated via coupled FEM under ΔT = 100 °C (25→125 °C). All layouts show yielding onset above 95 MPa, with a worst-case peak of 103.4 MPa in conventional TSV array near the Cu/SiO interface. Critically, the proposed layouts improve stress uniformity, the standard deviation of Von Mises stress drops from 3.54 MPa to 1.85-1.78 MPa such as up to a ∼50% reduction, while the average stress remains in a narrow 98.53-99.70 MPa band. These results indicate lower local stress concentration and reduced risk of interface damage under thermal loading.

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