ScholarWorks@성균관대학교

초록

Silicon nitride (SiNx) thin films were grown by separate-precursor-pulse plasma-enhanced chemical vapor deposition (SPP-PECVD). In one cycle, by supplying SiH4 silicon precursor and NH3 nitrogen precursor separately, hydrogenated amorphous silicon (a-Si:H) was first deposited by PECVD, and then the a-Si:H thin film was nitridated by NH3 plasma. This cycle was repeated to deposit SiNx thin films. SPP-PECVD can control the N/Si ratio of SiNx films by varying the pulse-time ratio of NH3 and SiH4. This SPP-PECVD was shown to enable more precise control of material properties over a wider N/Si range than conventional PECVD. Additionally, SPP-PECVD can have a SiNx deposition rate that is slower than conventional PECVD but much faster than atomic layer deposition. The SiNx films deposited by SPP-PECVD showed lower hydrogen content than those deposited by PECVD. The SiNx films with N/Si ratio of 1.15 deposited by SPP-PECVD showed high dielectric breakdown field strength of 9.55 MV/cm. The indium-gallium-zinc-oxide thin-film transistor (IGZO TFT) using this film as a gate dielectric showed high on/off ratio of 1.1 × 109 and low subthreshold swing of 245 mV/decade. © 2025 Elsevier Ltd

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