상세 보기
Atomic-layer deposited mid-infrared sensitive NbTiN superconducting nanowire single photon detectors
- Choudhary, Nidhi;
- Morozov, Dmitry;
- Kuznesof, Daniel;
- Lennon, Ciaran T.;
- Vikas, Vikas;
- ... Chong, Yonuk;
- 외 4명
WEB OF SCIENCE
0SCOPUS
0초록
The advancement of superconducting nanowire single-photon detectors (SNSPDs or SSPDs) is intrinsically linked to breakthroughs in superconducting materials engineering. These detectors are prized for their excellent sensitivity and performance across a wide wavelength range, from ultra-violet to mid-infrared (mid-IR). Plasma-enhanced atomic layer deposition (ALD) is an advanced deposition technique that enables exceptional film uniformity across large wafers, making it ideal for a variety of applications. In this study, ALD NbTiN films are fabricated into SNSPDs that exhibit single-photon response across near- to mid-IR wavelengths. A 5 nm thick NbTiN film was patterned into devices consisting of similar to 100 nm wide meandered nanowires, and the nanowire cross-section and composition were analysed by transmission electron microscopy. The devices were tested in a closed-cycle cryostat with a base temperature of 0.9 K. Photon detection rate and timing jitter were measured across the wavelength range 1.5-4.4 & micro;m under low dark count conditions, confirming single-photon sensitivity across the measured wavelength bands. This work introduces the ALD-grown NbTiN films as a new platform for SNSPD detectors, achieving mid-IR single-photon sensitivity. The intact film quality after fabrication demonstrates the potential of ALD processes for scalable infrared detector technologies.
키워드
- 제목
- Atomic-layer deposited mid-infrared sensitive NbTiN superconducting nanowire single photon detectors
- 저자
- Choudhary, Nidhi; Morozov, Dmitry; Kuznesof, Daniel; Lennon, Ciaran T.; Vikas, Vikas; Cho, Dongki; Peeters, Silke A.; Chong, Yonuk; MacLaren, Ian; Hadfield, Robert H.
- 발행일
- 2026-04-01
- 유형
- Article
- 권
- 39
- 호
- 4
- 언어
- ENG
- 출판사
- IOP Publishing Ltd
- 발행국가
- 영국
- ISSN
- E 1361-6668
P 0953-2048