ScholarWorks@성균관대학교

초록

We present a stable and efficient field electron emission device based on planar graphene directly grown on SiO 2/Si substrates using plasma-enhanced chemical vapor deposition (PECVD). The PECVD process carried out in a hydrogen-rich environment at low temperature effectively lowers the work function through doping effects, while the defect states formed during low-temperature synthesis induce local field enhancement. These factors act synergistically to enable stable Fowler-Nordheim tunneling and reliable device operation. The transfer-free, catalyst-free process ensures high reproducibility, and the resulting device exhibits a low turn-on voltage of 7.5 V. Remarkably, the single-cell device achieved an emission current density of 400 mA/cm2, while the 5 × 5 array cell device reached 300 mA/cm2, both of which significantly exceed values reported for previously studied planar graphene-based emitters. These findings demonstrate that planar graphene is a promising material platform for scalable, low-power vacuum electronic applications.

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