Low-Temperature Polycrystalline Silicon Thin-Film Transistor-Based Micro Light-Emitting Diode Pixel Circuit Using Quaternary Digital Pulse Width Modulation for Simple Structure and Short Delay Time
  • Im, Hwarim
  • Jung, Eun Kyo
  • Woo, Hye-Won
  • Moon, Kook Chul
  • Kim, Yong-Sang
Citations

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초록

We propose a low-temperature polycrystalline silicon thin-film transistor (TFT)-based micro light-emitting diode (μLED) pixel circuit using quaternary digital pulse width modulation (PWM). The proposed circuit uses a stepwise control signal to modulate the emission time of each subframe in four levels, thereby reducing the number of subframes by half compared with conventional binary digital driving. Because the stepwise control signal can directly change the PWM driving TFT from off-state to on-state, the proposed circuit exhibits a short delay time of 1.83 μs and low luminance variations of 3.45% without requiring a compensation structure for the threshold voltage of the PWM driving TFT. The proposed pixel circuit can be efficiently used in high-quality μLED displays, ensuring a stable operation. © 1980-2012 IEEE.

키워드

low-temperature polycrystalline silicon thin-film transistorsMicro light-emitting diode pixel circuitquaternary digital pulse width modulation drivingshort delay timestepwise control signal
제목
Low-Temperature Polycrystalline Silicon Thin-Film Transistor-Based Micro Light-Emitting Diode Pixel Circuit Using Quaternary Digital Pulse Width Modulation for Simple Structure and Short Delay Time
저자
Im, HwarimJung, Eun KyoWoo, Hye-WonMoon, Kook ChulKim, Yong-Sang
DOI
10.1109/LED.2025.3535586
발행일
2025-04
유형
Article
저널명
IEEE Electron Device Letters
46
4
페이지
608 ~ 611