ScholarWorks@성균관대학교

초록

The need for highly sensitive and reliable gas sensors is critical for various applications. Metal oxide gas sensors are at the forefront of this technological demand. However, existing studies predominantly focus on enhancing the sensor response, often neglecting other crucial performance metrics such as thermal stability, leading to sensors with suboptimal overall performance. In this study, we investigate the effects of silicon doping on indium-zinc-oxide (IZO) thin-film transistor (TFT)-type gas sensors from a comprehensive perspective. We demonstrate that Si-doping effectively reduces oxygen vacancies in the IZO film, leading to improvements in structural integrity and stability. This enhancement is reflected in a significant reduction in 1/f noise, an increase in SNR, and thermal stability. Consequently, the limit of detection (LoD) for the Si-doped IZO TFT-type gas sensor is markedly improved, decreasing from 1.8 ppb to 0.29 ppb. Our findings underscore the importance of a holistic approach in the development of metal oxide gas sensors. By considering a broad set of performance factors, we achieve a more reliable and sensitive gas-sensing platform. This study provides valuable insights for the future design and optimization of advanced gas sensors, ensuring better performance across diverse operating conditions. © 2024 Elsevier B.V.

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