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초록

Aluminum oxyfluoride (AlOxFy) nanolaminate thin films with various compositions were grown by alternating atomic layer deposition (ALD) cycles of aluminum oxide (Al2O3) and aluminum fluoride (AlF3) at different ratios. The addition of the AlF3 cycles significantly reduced the defects in the ALD-grown Al2O3 films. The defects inside the AlOxFy nanolaminate films were analyzed by exposing the defects inside the films by plasma etching after depositing them on a silicon (Si) substrate so that the etching gases penetrating through these defects etch the Si substrate and leave the etching traces. It was confirmed that the defect density inside the AlOxFy films was significantly reduced when the ALD cycle ratio of Al2O3 and AlF3 was optimal. These results were experimentally verified by observing the changes in the characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) when AlOxFy films were covered over the TFTs and hydrogen gas was allowed to permeate the films for a certain period of time. When the ALD cycle ratio of Al2O3 and AlF3 was 5:1, hydrogen penetration was the lowest and the change in characteristics of the IGZO TFTs was also the smallest. © 2025 Elsevier Ltd

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