ScholarWorks@성균관대학교

초록

Gallium nitride (GaN) high electron mobility transistors (HEMTs) generate significant Joule heating near the electron channel due to high-power operation. This localized heating substantially increases the channel temperature, leading to performance degradation and reduced reliability. Among various heat removal pathways, the device-level region, which spans a few hundred micrometers from the electronic junction, exhibits particularly high device thermal resistance. This resistance critically impedes heat dissipation, underscoring the importance of device-level thermal management prior to implementing package-and system-level cooling strategies. In this study, we conduct electrical modeling to predict the selfheating behavior of GaN devices and understand the heat generation mechanisms. Based on these results, we perform thermal modeling to evaluate various cooling strategies, focusing on the necessity of device-level thermal management for optimal performance. Specifically, we examine: (1) bottomside cooling, including conventional micro-channels and substrate-integrated microchannels; (2) top-side cooling, using diamond capping layer. Our findings underscore the importance of combining high thermal conductivity substrates with advanced cooling strategies to minimize device-level thermal resistance, enabling efficient and reliable operation in high-power applications.

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