상세 보기
- Park, Hyeonjung;
- Han, Changwoo;
- Choi, Yejoo;
- Choi, Myeongjae;
- Won, Sangmin;
- 외 1명
WEB OF SCIENCE
1SCOPUS
1초록
this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W18O49 layer was formed between the bottom electrode and HZO layer. This work provides a perspective to optimize the bottom electrode annealing conditions to enhance the endurance characteristics of W/HZO/W capacitors.
키워드
- 제목
- Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors
- 저자
- Park, Hyeonjung; Han, Changwoo; Choi, Yejoo; Choi, Myeongjae; Won, Sangmin; Shin, Changhwan
- 발행일
- 2025-11
- 유형
- Article
- 권
- 46
- 호
- 11
- 페이지
- 2038 ~ 2041