ScholarWorks@성균관대학교

초록

Silicon heterojunction (HJT) solar cells are limited by the high cost and resource constraints of conventionalscreen-printed Ag metallization, especially in bifacial architectures requiring grid contacts on both sides. This work presents an innovative Ag-coated Cu metallization and grid optimization approach as a cost-effective alternative, combining experimental investigation with simulation-based analysis. Drying temperatures between 120 degrees C and 200 degrees C are examined, with 160 degrees C identified as optimal, promoting strong Ag-Cu particle connections and yielding a minimum series resistance of 0.89 Omega & centerdot;cm2 and an efficiency of 22.62%. Finger-spacing studies show that medium spacing provides the best trade-off between resistive loss and shading, delivering J sc = 40.13 mA/cm2, V oc = 736.88 mV, and FF = 76.47%. Griddler 2.5 simulations further validate these trends and quantify metallization-related power losses. Among the evaluated busbar architectures (straight, rectangular pad-tapered, round pad, digital, two-split, and three-split), the simulation identifies types II-IV as optimal, achieving a maximum simulated J sc of 40.06 mA/cm2 and FF of 77.08%, indicating reduced resistive losses through improved current-collection geometry. These results demonstrate that optimized Ag-coated Cu metallization can effectively replace conventional Ag contacts in bifacial HJT cells without significant efficiency loss.

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