ScholarWorks@성균관대학교

초록

In the semiconductor industry, transistor scaling has been accelerated, and resistive-capacitive (RC) delay has increased in the multilayer interconnects. To reduce the RC delay, low dielectric constant (low-k) films have been used as interlayer dielectrics (ILDs), and new precursors have been explored continuously for the low-k films. In this study, tris(trimethylsiloxy)silane (TMSS) was first introduced as a new precursor for the low-k film deposition in a plasma-enhanced chemical vapor deposition (PECVD) system. The low-k film deposited at 20 W showed the lowest k value of 2.70, which was mainly explained by the increased M-group (O-Si-C3) in chemical properties. The low-k film deposited at 20 W exhibited a hardness of 1.503 GPa, elastic modulus of 10.79 GPa, and leakage current density of 7.40 x$\times$ 10-8 A/cm2 at 1 MV/cm, which were suitable for the ILD applications. The TMSS precursor was first suggested as a new precursor to fabricate the low-k films.Graphical AbstractLow-k thin film fabricated by plasma-enhanced chemical vapor deposition of tris(trimethylsiloxy)silane precursor for ILD applications.

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