A 0.6-to-1.1-V 2-A Dead-Zone-Based Dual-Loop Ring-Amplifier LDO for High-Current-Density Custom HBM Applications
  • Hwang, Yunbeom
  • Song, Minkyu
  • Kwon, Yongkeon
  • An, Junseo
  • Park, Jun-Eun
Citations

WEB OF SCIENCE

2
Citations

SCOPUS

3

초록

This letter presents a ring-amplifier low- dropout regulator (RA-LDO) that delivers a heavy load current of up to 2 A and achieves an ultrafast transient response across a wide input voltage range from 0.6 to 1.1 V. The RA-LDO employs a coarse-fine dual-loop regulation scheme, combining a high-slew-rate coarse ring-amplifier (RA) with a high-gain fine RA to enable both fast transient response and accurate output regulation. A dead-zone–based dual-loop control mechanism is adopted to ensure stable operation by leveraging the inherent dead zones of RAs. To improve power efficiency across the wide input range, the RAs incorporate dynamic biasing and dynamic voltage scaling through an auxiliary LDO. The RA-LDO also dynamically adjusts pluggable pass gates (PPGs), effectively extending the load current range up to 2 A. A prototype was fabricated in a 40-nm CMOS process, occupying an active area of 0.073 mm^{2} . The prototype achieved a voltage droop of 50mV and a settling time of 32ns in response to a load step of 1A/ns at an input voltage of 0.9V and an output voltage of 0.8V. © 1986-2012 IEEE.

키워드

Dual regulation loopfast transient responseHBMlow - dropout regulator (LDO)power integrityring amplifier (RA)xPU
제목
A 0.6-to-1.1-V 2-A Dead-Zone-Based Dual-Loop Ring-Amplifier LDO for High-Current-Density Custom HBM Applications
저자
Hwang, YunbeomSong, MinkyuKwon, YongkeonAn, JunseoPark, Jun-Eun
DOI
10.1109/TPEL.2025.3576222
발행일
2025-10
유형
Article
저널명
IEEE Transactions on Power Electronics
40
10
페이지
14282 ~ 14288