상세 보기
- Guo, Yumeng;
- Pan, Zhong;
- Zhang, Junzhe;
- Wang, Fucheng;
- Chen, Jingwen;
- ... Kim, Yong-Sang;
- ... Song, Jang-Kun;
- ... Yi, Junsin;
- 외 2명
WEB OF SCIENCE
1SCOPUS
1초록
This study presents high-performance Al-doped HfO2 (HfAlO) ferroelectric thin films for non-volatile memory, processed at a low annealing temperature of 450 degrees C. To overcome the challenge of high annealing temperatures in NVM, we propose a low-temperature solution. Thin films (10 similar to 12 nm) were deposited via atomic layer deposition (ALD) on p-type silicon, with Al doping concentrations of 2 %, 3.2 %, 4 %, 6 %, and 8 % mol. Three Al2O3 layers were interleaved within the HfO2 matrix. Rapid thermal annealing (RTA) was performed at 450 degrees C for 1 or 5 min in nitrogen. Electrical characterization confirmed ferroelectricity activation, with remnant polarization (2Pr) dependent on Al concentration and annealing duration. The best response (2Pr: 18.3-20 mu C/cm(2), storage window: 1 similar to 3.5 V) was observed in 3.2 mol% Al-doped films annealed for 5 min. These findings highlight the potential of precise doping and low-temperature processing for integrating HfAlO into thermally constrained memory technologies.
키워드
- 제목
- Al doping concentration effects in HfO2 ferroelectric memory fabricated via low-temperature PDA annealing
- 저자
- Guo, Yumeng; Pan, Zhong; Zhang, Junzhe; Wang, Fucheng; Chen, Jingwen; Jang, Yunhui; Kim, Yong-Sang; Song, Jang-Kun; Khokhar, Muhammad Quddamah; Yi, Junsin
- 발행일
- 2025-10
- 유형
- Article
- 권
- 320