Optimizing anti-reflection and surface passivation for n-type back-contact back-junction silicon solar cells using SiNx/SiON stack layers: Insights from quokka simulation
  • Dao, Vinh-Ai
  • Nguyen, Phuong T.K.
  • Ju, Minkyu
  • Do, Hong-Thuy
  • Nguyen-Le, Van-Thanh
  • ... Yi, Junsin
  • 외 5명
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초록

The back-contact back-junction (BC BJ) cell configuration's unique design, with the emitter and rear contact on the back, allows for easier and more effective carrier collection from the rear. This study utilized the non-vacuum break method to create SiNx/SiON dual layers; these layers were then used as both an anti-reflection and passivation layer to enhance the performance of the BC BJ cells. Both experimental and simulation approaches were employed to optimize these performances. By integrating the advantageous characteristics of the SiN-rich SiNx layer and the SiON layer, the stacked SiNx/SiON layer demonstrates remarkably low surface recombination with an average surface reflectance of 3.95 % and 5 cm/s, respectively. Through simulation, introducing the SiNx/SiON stack on the front side of the BJ BC results in an increase of up to 3.4 mA/cm2 in short-circuit current density and 26 mV in open-circuit voltage, as compared to using a single SiNx layer. The incorporation of the SiNx/SiON stack resulted in an approximately 14.59 % efficiency enhancement for BJ BC solar cells. This success motivates further research into non-vacuum-based optimization techniques for BJ BC cells. © 2025 Elsevier Ltd

키워드

High efficiencyQuokka simulationSiN<sub>x</sub>/SiON stackSurface passivationOPTICAL-PROPERTIESNITRIDEFILMSPECVDSINXCOATINGS
제목
Optimizing anti-reflection and surface passivation for n-type back-contact back-junction silicon solar cells using SiNx/SiON stack layers: Insights from quokka simulation
저자
Dao, Vinh-AiNguyen, Phuong T.K.Ju, MinkyuDo, Hong-ThuyNguyen-Le, Van-ThanhNguyen, Chi-HieuTran-Thi, Khanh-ChiTran, Y B.N.Thanh Nguyen, Huong ThiTrinh, Thanh ThuyYi, Junsin
DOI
10.1016/j.jpcs.2025.112841
발행일
2025-11
유형
Article
저널명
Journal of Physics and Chemistry of Solids
206