Thermal curing of interface defects at a-si:H/c-Si in heterojunction with intrinsic thin layer (HIT) solar cell processing

초록

This study explores the use of thermal treatment to recover defects at the a-Si:H/c-Si interface caused by transparent conductive oxide (TCO) deposition, improving passivation by diminishing interface defect density (Dit). A 200 °C thermal treatment enhanced HIT solar cell performance, increasing the effective bulk lifetime to 1.1 ms at a minority carrier density of 1.0 × 101⁵ cm⁻³. Key performance metrics improved, including Jsc (from 38.70 to 38.88 mA/cm2), Voc (from 727 to 730 mV), FF (from 75.50 % to 77.82 %), and efficiency (from 21.27 % to 22.09 %). AFORS-HET simulations showed that Dit must be less than 1 × 1011 cm⁻2 eV⁻1 for optimal efficiency. The best solar cell performance, achieved in simulations, included Jsc of 37.71 mA/cm2, Voc of 716.8 mV, FF of 83.50 %, and efficiency of 22.57 % at Dit of 1 × 10⁹ cm⁻2 eV⁻1. This combined approach offers insights into defect management for solar cell technology. © 2025

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