ScholarWorks@성균관대학교

초록

Amorphous silicon (a-Si) is essential for defect passivation and enhancing performance in high-efficiency heterojunction silicon solar cells (HJT). Deuterium plasma treatment (DPT) demonstrates superior resistance to light-induced defects and enhances the thermal stability of a-Si. This study investigates the effects of DPT applied at different stages-Pre, Post, and midway (Mid)-during plasma-enhanced chemical vapor deposition to optimize surface passivation and understand the underlying mechanisms. Both Mid and Post DPT achieved superior a-Si/c-Si passivation quality, significantly improving the minority carrier lifetime. For 10 nm a-Si passivation layers, the lifetimes reached 1889 mu s and 1049 mu s for the Mid and Post DPT, respectively, at an excess carrier density of 1.0 x 1015 cm-3. Thermal stability tests showed rapid degradation of a-Si passivation quality above 240 degrees C, with the lifetime dropping from 680 mu s to 493 mu s. In contrast, DPT-treated wafers demonstrated excellent thermal stability, with the lifetime reducing from 1025 mu s to 901 mu s under 1 sun calibration at 280 degrees C. These findings underscore the potential of DPT for enhancing passivation performance and thermal stability in HJT solar cells.

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