Metal-insulator transition in surface-doped VO2 nanowires at liquid helium temperature
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초록

The metal-insulator transition (MIT) in VO2 nanowire devices, driven by electric field-induced nonequilibrium effects, is observed at liquid helium temperature. This unusually low transition temperature is achieved by surface doping VO2 nanowires with gold nanoparticles (NPs). The presence of gold NPs may promote percolative conduction pathways, enhance electronic inhomogeneity, or alter lattice–electron coupling. These effects collectively enable a smoother MIT at a lower electric field compared to pristine VO2 nanowires. An empirical model is used to distinguish Joule heating from electric field contributions, confirming the dominance of nonequilibrium electric field effects. Repeated voltage sweeps further reveal hysteresis and current variations, providing insights into carrier dynamics and correlated electron behavior introduced by NP decoration. These findings advance understanding of the MIT mechanism in VO2 and emphasize the role of surface modifications in tailoring phase transitions at cryogenic temperatures.

키워드

Au nanoparticlesDielectrophoresisMetal-to-insulator transitionMott and peierls transitionVO2 nanowires
제목
Metal-insulator transition in surface-doped VO2 nanowires at liquid helium temperature
저자
Yun, Seok HwangBaik, Jeong MinHan, Jong E.Khan, Muhammad AtifYun, Sun JinKim, Gil-Ho
DOI
10.1016/j.physe.2026.116479
발행일
2026-04-01
유형
Article
저널명
Physica E: Low-Dimensional Systems and Nanostructures
179