ScholarWorks@성균관대학교

초록

Memristor-based olfactory systems have attracted significant interest. However, a multifunctional memristor array capable of sensing, memory, and computation has not been realized. This study develops a selector-less crossbar array (CBA) composed of Pt/HfO2 nanorods/TiN memristors, termed "chemo-memristive" devices, that exhibits asymmetric current-voltage (I-V) characteristics under a hydrogen (H-2) atmosphere. H-2 exposure creates oxygen vacancies (V-O) in the nanogap, corresponding to the ruptured filament region. The V-O-H complexes form shallow traps that enable trap-assisted conduction under the TiN-injection polarity, thereby switching the I-V response from symmetric to a polarity-dependent, asymmetric one. This yields an H-2-assisted intermediate-resistance state and enables analog resistance tuning via NG widening. Hence, precise conductance modulation and cell-selective readout were achieved by exploiting the forward-reverse current asymmetry, as validated in selector-free operation of a 3 x 3 CBA. Modified National Institute of Standards and Technology digit pattern-recognition simulations demonstrate high inference accuracy (>94%) with highly linear and symmetrical conductance modulation, suitable for large-scale arrays. The adjustable I-V properties allow an electrically reconfigurable olfactory network that can process H-2 flow patterns using high-dimensional graph features. A single H-2-assisted CBA integrates selective sensing, which reinforces intended paths, with analog in-memory computation, enabling combined neuromorphic and electronic-olfaction functionality.

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