상세 보기
- Cha, Byeong Jun;
- Lee, Sang Ju;
- Choi, Chang Min;
- Jeon, Cheolho;
- Kim, Young Dok;
- 외 1명
WEB OF SCIENCE
2SCOPUS
2초록
Many recent studies showed mixing CO2 with the Ar gas source improves the secondary ionization yield of an Ar gas cluster ion beam (GCIB) with enhanced depth resolution. However, the impact of CO2 addition on the surface chemical structure remains unclear. In the present work, we studied the effect of CO2 addition to Ar on the GCIB sputtering behavior of a Si wafer surface using an in-situ GCIB & X-ray photoelectron spectroscopy (XPS) combined system. During preferential sputtering with Ar GCIB, substoichiometric SiOx (x < 2) forms, leaving unstable Si species on the surface. These species could interact with surface carbon impurities, leading to the formation of SiC. In addition, a slight distortion of Si lattice could increase its amorphous character. Mixing CO2 with Ar significantly reduces these structural changes without specific carbon contamination. © 2025
키워드
- 제목
- Effect of CO2 addition to Ar on gas cluster ion beam sputtering of a Si wafer: An in-situ XPS study
- 저자
- Cha, Byeong Jun; Lee, Sang Ju; Choi, Chang Min; Jeon, Cheolho; Kim, Young Dok; Choi, Myoung Choul
- 발행일
- 2025-06
- 유형
- Article
- 저널명
- Applied Surface Science Advances
- 권
- 27