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초록

Stretchable artificial synapses represent a significant advancement due to their conformal contact with living tissues. However, recovery from damage remains challenging because of the lack of spontaneous restoration of synaptic functionality after irreversible failure. Here, we report a self-healing stretchable synaptic transistor (3S-T) capable of recovering from damage at the full device scale. The self-healing polymer integrated with CNT and a DPP-DTT composite enables restoration of electrodes and channels, while p-PVDF-HFP-DBP coated onto PDMS-MPU0.4-IU0.6 provides synaptic functionality and support thin-film realignment at the device level. The dipole-dipole interactions between C & boxH;O groups in PDMS-MPU0.4-IU0.6 and C-H groups in p-PVDF-HFP-DBP, which drive a rearrangement of the polymeric chain to zig-zag formation during annealing. As a result, the 3S-T achieves similar to 80% recovery of on-current and memory window after complete damage. Moreover, its intrinsic self-healing properties facilitate 3D reconfiguration and array integration. The 3S-T maintains output current after stacking and rolling. Leveraging these properties, modules comprising stacked 3S-T arrays can be reconfigured at the module scale using Ag flake composite on CNT interconnects. In addition, we introduce a fundamental method for preventing crosstalk during the operation of 3S-Ts and demonstrate emulated weight summation between synaptic cells and neuroplasticity through array reconfiguration.

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