ScholarWorks@성균관대학교

초록

Conventional silicon-based semiconductors face short‑channel effects and drain‑induced barrier lowering as channel dimensions of the Field-effect transistors (FETs) approach their physical limits. Two‑dimensional (2D) van der Waals semiconductors, such as Transition metal chalcogenides (TMCs), offer atomic‑scale thickness, self‑passivated surfaces, and high carrier mobility, presenting a promising path beyond silicon scaling. However, chalcogen vacancies in TMCs, interface traps, unintended doping, and Schottky contacts introduce variability and high contact resistance, challenging device reliability. In addition, accurate evaluation of electrical characteristics is critical because it ensures reliable comparison of device performance, while guiding material and process optimization for commercialization of 2D semiconductor technologies. Here, we introduce three key electrical measurement techniques for 2D channel FETs; (i) four‑terminal method, (ii) Hall measurement, and (iii) Transfer length method (TLM). We also review the various extraction methods for sheet resistance, carrier concentration, field‑effect mobility, and contact resistivity, and highlights their error sources and best practices. Our guidelines therefore help to enable reliable parameter extraction, providing reference metrics to enhance the accuracy and reproducibility of 2D device characterizations

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