ScholarWorks@성균관대학교

초록

Harnessing the potential of hot carriers is a promising approach for advancing the efficiency of photovoltaic and optoelectronic devices. However, their rapid energy dissipation through carrier-phonon scattering and recombination significantly limits practical applications. Dielectric engineering has emerged as a promising strategy to modulate carrier transport properties in low-dimensional materials, including transition metal dichalcogenides. In this study, the impact of dielectric screening is investigated on hot carrier dynamics in monolayer MoS2 using transient absorption microscopy. The results demonstrate that a high dielectric constant (high-kappa) metal-oxide substrate effectively suppresses the Coulomb potential, reducing carrier scattering and recombination while significantly enhancing hot carrier diffusion length and coefficient compared to a conventional quartz substrate. These findings establish dielectric engineering as a powerful tool for improving hot carrier transport without requiring complex material modifications or external stimuli, offering a scalable and efficient strategy for next-generation electronic and optoelectronic devices.

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