ScholarWorks@성균관대학교

초록

This work presents a compact modeling framework for FTJs using hafnia-based ferroelectrics for neuromorphic applications. FTJ behavior is modeled by integrating the Preisach polarization model with a non-local tunneling model based on the WKB approximation in Sentaurus TCAD. The impact of silicon doping on TER is analyzed, revealing that lower doping enhances resistance state contrast. Spike-based pulse modulation enables gradual polarization switching and multiple conductance levels. The model is validated through MNIST classification using TCAD-simulated data, demonstrating its potential for low-power, CMOS-compatible neuromorphic hardware.

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