상세 보기
- Seok, Hyunho;
- Son, Sihoon;
- Choi, Hyunbin;
- Lee, Jinhyoung;
- Kim, Geonwook;
- ... Kim, Gunhyoung;
- ... Son, Seowoo;
- ... Kim, Taesung;
- 외 1명
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0초록
Multimodal and edge AI systems increasingly face bandwidth bottlenecks, data-movement overhead, and the rigid, thermally coupled limitations of conventional 3D integration. Here, we introduce a monolithic 3D integration (M3D) of heterogeneous neuromorphic platform that overcomes these constraints by vertically integrating atomic-scale electronics with complementary memristive devices. Ultralow-power van der Waals transistors provide selective access, WS2 conductive-filament memristors deliver stable low-voltage synaptic storage, and Ag-MoS2 diffusive memristors produce threshold-driven, biologically inspired spiking. These layers form a compact neuromorphic stack capable of synaptic plasticity, firing-rate modulation, temporal learning, analog in-memory computation, and convolutional feature extraction. This architecture allows layers to be manipulated enabling on-demand compute scaling. Demonstrations of analog vector-matrix multiplication for CNN inference and image filtering-achieving 93.1% CIFAR-10 accuracy under realistic nonidealities-highlight the platform's capability for energy-efficient, beyond-von Neumann computation. The proposed 2D-material-based platform enables heterogeneous functional partitioning while preserving programmability across vertically integrated tiers. The unified 3D architecture supports multimodal neuromorphic operation with layer-level specialization and intertier signal coupling, covalidating learning and system-level functionality within a single integrated stack.
키워드
- 제목
- Heterogeneous 3D Integration Based on Atomic-Level Electronics
- 저자
- Seok, Hyunho; Son, Sihoon; Choi, Hyunbin; Lee, Jinhyoung; Kim, Geonwook; Kim, Gunhyoung; Lee, Dongho; Son, Seowoo; Kim, Taesung
- 발행일
- 2026-04-22
- 유형
- Article
- 권
- 18
- 호
- 15
- 페이지
- 22130 ~ 22139