상세 보기
- Lyi, Churlhi;
- Kim, Youngkuk
WEB OF SCIENCE
4SCOPUS
4초록
Strain-engineered topological phases in noncentrosymmetric materials offer fertile ground for realizing exotic quantum states, yet their experimental realization remains elusive. Here, using first-principles calculations, we demonstrate that the van der Waals layered material γ-GeSe undergoes a sequence of strain-induced topological phase transitions, including the emergence of a higher-order topological Dirac semimetal phase. Under in-plane biaxial tensile strain, we uncover a sequential evolution of topological phases, including topological nodal-line semimetals, Dirac semimetals, and a higher-order topological Dirac semimetal phase. Notably, the noncentrosymmetric higher-order topological Dirac semimetal phase is characterized by Dirac points coexisting with higher-order topological insulating phases on the kz = 0 plane, enabled by quantization of the mirror-resolved Zak phase. These findings position γ-GeSe as an experimentally viable platform for investigating strain-engineered topological phenomena unique to noncentrosymmetric systems. © 2025 American Chemical Society.
키워드
- 제목
- Strain-Driven Higher-Order Topological Dirac Semimetal in Noncentrosymmetric γ-GeSe
- 저자
- Lyi, Churlhi; Kim, Youngkuk
- 발행일
- 2025-04
- 유형
- Article
- 저널명
- Nano Letters
- 권
- 25
- 호
- 16
- 페이지
- 6592 ~ 6598