상세 보기
- Alamgeer, None;
- Madara, Polgampola Chamani;
- Khokhar, Muhammad Quddamah;
- Yousuf, Hasnain;
- Jony, Jaljalalul Abedin;
- ... Yi, Junsin;
- 외 5명
WEB OF SCIENCE
3SCOPUS
4초록
We present a structural design for a four-terminal III-V/crystalline silicon (c-Si) multijunction (MJ) device based on optimized bifacial illumination. The proposed configuration consists of a triple-junction top cell incorporating gallium indium phosphide (GaInP), indium gallium arsenide (InGaAs), and germanium (Ge), paired with a tunnel oxide passivating contact (TOPCon) as the bottom cell. The bifacial TOPCon cell effectively enhances the transmission of albedo-reflected light into the c-Si absorber, delivering superior performance compared to conventional heterojunction cells. With an additional rear illumination of 0.3 sun, the bottom cell efficiency increases by 9.61%. Bifacial illumination enhances the overall efficiency of the MJ device by 20.77% compared to the monofacial device. With the power conversion efficiency (PCE) of bifacial GaInP/InGaAs/Ge/TOPCon MJ devices reaching 35.70%, this design demonstrates significant potential for advancing high-efficiency bifacial solar cell technologies. © 2025 American Chemical Society.
키워드
- 제목
- Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells
- 저자
- Alamgeer, None; Madara, Polgampola Chamani; Khokhar, Muhammad Quddamah; Yousuf, Hasnain; Jony, Jaljalalul Abedin; Rahman, Rafi ur; Bae, Junhan; Jang, Seokjin; Shin, Min-Kyung; Park, Sangheon; Yi, Junsin
- 발행일
- 2025-01
- 유형
- Article
- 저널명
- ACS Applied Energy Materials
- 권
- 8
- 호
- 2
- 페이지
- 991 ~ 997