ScholarWorks@성균관대학교

초록

This work demonstrates the synthesis of spin-on oxide semiconductors via an ultraviolet (UV)-assisted annealing process using metal-organic precursors with beta-diketone ligands. This process promotes the decomposition and subsequent condensation while preserving a high density of hydrogen- and oxygen-related donor species. These donors effectively supply free electrons and fill shallow trap states near the conduction band minimum (CBM), resulting in enhanced carrier mobility and on-current. A peak field-effect mobility of 89 cm2/V & centerdot;s, an on-current (I on) of 26.42 mu A, and an I on/I off ratio of 108 were achieved in bottom-gated transistors using a SiO2 gate dielectric. Moreover, the high density of trap states near the CBM broadens the spectral detection range from UV to visible light, yielding a high responsivity of 8,900 A/W and a detectivity of 1.26 & times; 1014 Jones. Leveraging this broadband photoresponsivity, we further developed a vertically stacked sensor platform for the detection of volatile organic compounds (VOCs). These results highlight UV-assisted solution processing as a powerful strategy to realize high-performance oxide electronics and multifunctional sensor platforms.

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