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초록

Emerging devices in the modern information era must demonstrate higher density, superior data processing performance, lower energy consumption, greater adaptability, multifunctionality, and compatibility with streamlined manufacturing. Owing to the limitations of current Si-based devices in meeting these demands, researchers are actively exploring novel active materials for future technologies, including metal oxide semiconductors, organic semiconductors, and two-dimensional (2D) materials. Halide perovskites, with their adjustable bandgap, enable the modulation of predominant charge carriers, facilitate swift ion transport, and offer considerable flexibility. The hysteresis observed in current-voltage (I-V) profiles, stemming from rapid ion migration and differences between forward and reverse scanning currents, presents promising prospects for memristors and artificial synaptic devices that utilize halide perovskites beyond optoelectronic applications. Consequently, it is essential to comprehend both the structural and electrical attributes of halide perovskites. This review presents recent progress in resistive switching memory devices that incorporate halide perovskites and seeks to explain their distinctive characteristics. After examining the unique properties of halide perovskites that render them suitable for resistive switching memories, this review introduces a variety of pivotal investigations in this field. Research into resistive switching memories must encompass a broad spectrum of halide perovskite compositions. In conclusion, this review comprehensively surveys prospective pathways for halide perovskites, highlighting their substantial promise.

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