ScholarX: KIM, YOUNG MIN

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KIM, YOUNG MIN (김영민)

Sungkyun Convergence Institute (Energy)

Research Area: 주사투과전자현미경 (STEM), 전자에너지손실분광분석 (EELS), 에너지분산 X-ray 분광분석 (EDX), Scanning transmission electron microscopy, Electron energy loss spectroscopy, Energy dispersive X-ray spectroscopy

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transition metal dichalcogenides:5||oxygen vacancy:5||ferroelectrics:4||Liion batteries:4||Chemical vapor deposition:3||Transition metal dichalcogenides:3||BiFeO3:3||chemical solution deposition:3||chemical vapor deposition:3||Thermoelectric:3||Membrane electrode assembly:3||/sub>:2||Electron tomography:2||hydrogen evolution reaction:2||High Ni cathode materials:2||thermal conductivity:2||thermoelectrics:2||thin film:2||Machine learning:2||Outofplane piezoelectricity:2||negative capacitance:2||transitionmetal dichalcogenides:2||Thermoelectrics:2||deep learning:2||excitons:2||tungsten diselenide:2||scanning transmission electron microscopy:2||twodimensional materials:2||Liion battery:2||Oxygen vacancy:2||vacancy engineering:2||Scanning transmission electron microscopy:2||Transition metal oxide:2||van der Waals heterostructure:2||NCA cathode materials:2||Principal component analysis:2||firstprinciples calculations:2||wakeupfree:2||Twin boundary:2||lithiumion battery:2||Hydrogen evolution reaction:2||:2||Twodimensional materials:2||sub>:2||RHEED:2||Fuel cell:2||Coprecipitation:2||electrides:2||phase transition:2||2<:2||mobility:2||Grain boundary:2||Defect formation:1||Defect structures:1||Dielectric capacitors:1||Dislocation arrays:1||Distribution of Al elements:1||Doping:1||Ductile fracture:1||EBSD misorientation line map:1||EPMA:1||Ecofriendly photocatalyst:1||Edge formation energy:1||Electric arcing:1||Electrocatalyst particles:1||Electron energy loss spectroscopy:1||Electron holography:1||Energy dispersive Xray spectroscopy:1||Energy loss nearedge fine structure:1||Energydispersive Xray spectroscopy:1||Esaki diode:1||Excess Cu doping:1||FIBSEM:1||Fe deposition:1||Fe foil:1||Fedoped TiO2 NPs:1||FePt:1||Ferroelectric:1||Ferroelectric domain structures:1||Ferroelectricity:1||Filling fraction:1||Firstprinciples calculation:1||Flexoelectric healing:1||Flexoelectricity:1||Focused ion beam milling:1||Formation mechanism of boundaries:1||Frequencydependent phonon scattering:1||GPA:1||Gold:1||Grain growth:1||Grain size:1||Grainboundary:1||Graphene transistor:1||Growth mode:1||Hafnium zirconium oxide:1||Halfheusler:1||Hexagonal boron nitride:1||HfO:1||HfO2based ultrathin films:1||High voltage:1||Homointerface:1||Hydrogen generation:1||Impurity state:1||In situ straining:1||InGaN:1||Intercalation:1||Interface engineering:1||Interface structure:1||Interfacial contact engineering:1||Interstitial defect:1||Intrinsic toughening:1||Inversion symmetry breaking:1||Ion beam irradiation:1||Kmeans clustering:1||Lattice strain:1||Lattice thermal conductivity:1||Leadfree piezoelectrics:1||Li(NixCoyMnz)O2:1||LiNbO3 thin films:1||Lifshitz transition:1||Light emitting diode (LED):1||Liquid exfoliation:1||Lithiation:1||Lithiumion battery:1||Lowdimensional magnetism:1||MAP 1: Discovery:1||MBE:1||MEA:1||Melamine:1||Meltsolidification process:1||Memory device:1||Metal oxide nanoparticle:1||Metal thin film:1||Metalinsulator transition:1||Metallic glass:1||Mn doping:1||Mndoped SnS 2:1||Molybdenum diselenides:1||Molybdenum disulfide:1||Molybdenum disulphide:1||Multinanodomains:1||Multiple defect structure:1||Multiple filled skutterudites:1||Nanofabrication:1||Nanoscale strain:1||Nanostructure engineering:1||Nb2Se9:1||Nb2se9:1||NdNiO3 thin films:1||Neuromorphic devices:1||Ni coating:1||Nirich cathode:1||Nirichcathode:1||Nonpolar:1||Nonpolar oxides:1||Octahedral tilt:1||Oxygen imaging:1||P concentration:1||PEMFC:1||PL:1||Particle size distribution:1||Pbfree dielectrics:1||Peierlstype lattice distortion:1||Perovskite:1||Perovskite film:1||Perovskites:1||Photocatalytic activity:1||Photocatalytic degradation:1||Photocatalytic oxidation:1||Phototransistor:1||Piezoresponse force microscopy:1||Point defect dynamics:1||Polarization:1||Porosity:1||Porous layered NCA:1||Proton exchange membrane:1||Ptbased alloys:1||QD composite sensitizers:1||Quantum confinement effect:1||Rareearth nickelates:1||Rattling:1||ReS<:1||ReS2:1||ReSe<:1||Realtime monitoring:1||Relaxor ferroelectric thin films:1||SEM imaging:1||STEM:1||STEMEDX spectrum Imaging:1||STEMEDX/EELS:1||Sbrich nanoprecipitate:1||Sevacancy:1||Selector:1||Semicoherent interface:1||Shear band:1||Si alloy:1||Smooth surface:1||Solvent dispersion:1||Spinorbitcoupling:1||SrRuO3:1||Strange metals:1||Strong Coulomb interaction:1||Sulfur vacancy:1||Surface oxygen vacancy:1||TMDC:1||Te vacancy:1||Temperature coefficient of resistance (TCR):1||Thermal conductivity:1||Thin film growth:1||TiO2 nanoparticles:1||Transition metal dichalcogenide:1||Transitionmetal dichalcogenides:1||Transmission electron microscope:1||Transmission electron microscopy:1||Transport properties:1||Tuning of aluminum concentration distribution:1||Two dimensional materials:1||Ultrahigh energy density:1||Vdoped WSe2:1||Volatile switching:1||VolmerTafel reaction:1||WSe2:1||WTe2:1||Water vapor transmission rate:1||Work function:1||Xe plasma:1||ZnO nanowire:1||accelerating voltage:1||achromatic metal films:1||alphaAl2O3:1||aluminum foil:1||anisotropy:1||annulative πextension:1||antiferromagnetism:1||antireflection:1||artificial heterostructuring:1||atomic scale precision:1||atomic sputtering epitaxy (ASE):1||atomicsawtooth surface:1||atomicscale epitaxy:1||bandgap:1||bimetallic:1||carbon allotropes:1||catalyst layer:1||cathode:1||cation mixing:1||charge density waves:1||chemical treatment:1||cobaltite:1||coherent oxidation:1||color control:1||conformal contact:1||core shell:1||correlated magnetic order:1||crystallographic orientation:1||cutoff frequency:1||defect engineering:1||defect healing:1||defectdipoles:1||density functional theory:1||diffusion barrier:1||diffusive reflectance:1||diluted ferromagnetic semiconductors:1||disordered anataseonly TiO2:1||disordered rocksalt cathodes:1||domain morphology:1||domain separation:1||double perovskites:1||dual atomic doping:1||durability:1||dynamic STEM analysis:1||electrical conductivity:1||electrocatalysis:1||electrocatalysts:1||electron doping:1||electron holography:1||electron microscope:1||electron tomography:1||electronic conduction:1||electronic phase transformation:1||epitaxial HfO2 thin film:1||epitaxial films:1||epitaxial growth:1||epitaxial oxide thin film:1||escalation of magnetic moment:1||exfoliation:1||face centered tetragonal:1||ferroelectric:1||ferroelectric polarization rotation:1||ferroelectric thin film:1||ferroelectricity:1||ferromagnetism modulation:1||fieldeffect transistor:1||fourvariants ferroelectric domains:1||freestanding membrane:1||gate tunable magnetism:1||gatecontrolled spintronics:1||glass transition temperature:1||grain boundary:1||grain boundary free:1||growth platform:1||hafnium zirconium oxide:1||heteroepitaxy:1||heterogeneous catalysts:1||heterophase:1||hole carriers in Cu:1||holey graphyne:1||hydrogen evolution:1||in situ transmission electron microscopy:1||inplane ferroelectrics:1||interface engineering:1||interfaces:1||internal thermal stress:1||ion transport:1||ionic gate modulation:1||kondo effects:1||laser irradiation:1||laseroxide lithography:1||lateral NbSe2WxNb1xSe2 heterostructure:1||lateral heterostructures:1||lattice dynamics:1||lattice engineering:1||layered cathode materials:1||layered semimetals:1||light trapping:1||liquid precursor:1||lithiation:1||lithium ion battery:1||lithium mixed transitionmetal oxides:1||magnetic anisotropy engineering:1||magnetic domains:1||magnetic semiconductors:1||magnetism:1||magnetoresistance:1||metal free:1||metal–metal bond:1||methanol oxidation reaction:1||molybdenum disulfide:1||monolayer niobium diselenide:1||multiferroic material:1||multiferroics:1||multiple magnetic phases:1||nanodomain:1||nanostructures:1||nanostructuring:1||narrow band structure:1||negative differential resistance:1||negatively charged surfaces:1||neuromorphic computing:1||new perovskite substrates:1||nonFermi liquids:1||nonoxidized bare copper nanoparticles:1||nonoxidized metal nanoparticles:1||nonenzymatic glucose sensing:1||nonlinear Hall effect:1||nonlinear sp bonding:1||octhahedral distortion:1||optical devices:1||orientation mapping:1||oxide:1||oxide superlattice:1||oxygen evolution reaction:1||oxygen octahedral tilting:1||oxygen transport:1||oxygen vacancy channel:1||oxygen vacancy ordering:1||ptype semiconductor:1||pH effect:1||perovskite:1||phase change:1||pnictogen chalcogenides:1||point defects:1||polycrystalline MoS2:1||polycrystalline thin films:1||porous copper films:1||postheat treatment:1||power factor:1||power generation:1||precession electron diffraction:1||protonic conduction:1||quantum phase transformation:1||rGOencapsulated cathode:1||redissolution:1||realtime observation:1||residual lithium:1||room temperature ferromagnetism:1||scanning electron microscopy:1||scanning tunneling microscopy:1||second harmonic generation:1||secondary particle:1||selfoxidation resistance:1||shortrange order:1||singlecrystal:1||singlecrystal copper thin film:1||singlecrystal copper thin films:1||singlecrystalline Cu films:1||spatial inversion symmetry breaking:1||spinlattice coupling:1||spinvalley coupling:1||spintronics:1||strain mapping:1||structural degradation:1||structural phase transformation:1||structural phase transitions:1||subsurface layer:1||sulfur vacancies:1||superhydrophilicity:1||superhydrophobicity:1||superionic conductance:1||supportless Pt:1||surface charge density wave:1||surfaceaccumulated excess electrons:1||switchable ferroelectric bias:1||symmetry engineering:1||symmetry mapping:1||synaptic device:1||temperatureinduced chemical potential shifts:1||ternary polar states:1||tin diselenide:1||titanium oxide films:1||titanium oxide nanosheets:1||transition metal chalcogenides:1||transmission Kikuchi diffraction:1||transmission electron microscopy:1||triangular hole orbit:1||trions:1||tungsten disulfide:1||ultraclean interface:1||vacancy dynamics:1||vacancydopant pairing:1||van der Waals bonding:1||van der Waals epitaxy:1||van der Waals layered materials:1||vanadium disulfide:1||vanadiumdoped tungsten diselenide:1||vdW materials:1||viscoelastic polymer support layer:1||visiblelightdriven CO2 reduction:1||washing:1||water dissociation:1||weakferromagnetics:1||wet chemical syntheses:1||widepH water splitting:1||(2)based ferroelectrics:1||(3):1||1D inorganic molecular chain:1||1d materials:1||2,5hydroxymethlyfurfural (HMF):1||2D diluted magnetic semiconductors:1||2D ferromagnetic semiconductors:1||2D layered materials:1||2D materials:1||2D transition metal dichalcogenides:1||2D tunneling heterojunction:1||3D porous:1||3D tomography:1||4Dscanning transmission electron microscopy positionaveraged convergent beam electron diffraction:1||Ag thin film growth:1||Anion vacancy:1||Anode materials:1||Antisite defect:1||Artificial nociceptor:1||Atom probe tomography:1||Atomic defect:1||Atomic defects:1||Atomic force microscopy:1||Atomic scale mapping:1||Atomicscale defect disorder:1||Attention UNet:1||BaZrO:1||Bi0.5Sb1.5Te3:1||Bi2Te2·7Se0.3:1||Boundary formation mechanism:1||Bright field:1||Bulk:1||CNTOH/CdS:1||Carbon corrosion:1||Carbon fiber:1||Carbon support:1||Carbonaceous nanostructures:1||Cathode materials:1||Cation vacancy:1||Cause of the fire:1||Chalcogen vacancy:1||Chemical bonding:1||Chemical functionalization:1||Cofree:1||Coherent interface:1||Convolutional neural network:1||Coreshell structure:1||DebyeCallaway model:1||Deep convolutional neural network:1||Deep learning:1||Defect engineering:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREA samsunglib@skku.edu

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